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Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets

Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets

来源:Arxiv_logoArxiv
英文摘要

We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1$T$-phase VSe$_2$ nanosheets, synthesized using chemical vapor deposition (CVD). The nanosheets exhibit a charge density wave (CDW) transition at $\sim$77 K. Detailed angle-resolved and temperature-dependent measurements reveal a strong cubic relationship between the third-harmonic Hall voltage $V_{3\omega}^\perp$ and the bias current $I_\omega$, persisting up to room temperature. Notably, the third-order NLHE demonstrates a twofold angular dependence and significant enhancement below the CDW transition temperature, indicative of threefold symmetry breaking in the CDW phase. Scaling analysis suggests that the intrinsic contribution from the Berry connection polarizability tensor is substantially increased in the CDW phase, while extrinsic effects dominate at higher temperatures. Our findings highlight the critical role of CDW-induced symmetry breaking in modulating quantum geometric properties and nonlinear transport phenomena in VSe$_2$, paving the way for future explorations in low-dimensional quantum materials.

An-Qi Wang、Jing-Wei Dong、Zhi-Min Liao、Tong-Yang Zhao、Dong Li、Xing-Yu Liu、Xin Liao、Zhao-Hui Chen

10.1103/PhysRevB.110.235135

非线性科学物理学

An-Qi Wang,Jing-Wei Dong,Zhi-Min Liao,Tong-Yang Zhao,Dong Li,Xing-Yu Liu,Xin Liao,Zhao-Hui Chen.Charge density wave modulated third-order nonlinear Hall effect in 1$T$-VSe$_2$ nanosheets[EB/OL].(2025-01-25)[2025-08-02].https://arxiv.org/abs/2501.15097.点此复制

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