铁磁条和硬势垒对谷依赖的电子输运性质的影响
he influence of the ferromagnetic stripe and the strained barrier on the valley-dependent electronic transport properties
使用转移矩阵方法研究铁磁条和硬势垒对谷依赖的电子输运性质的影响，重点分析了铁磁金属条产生的磁场的大小和铁磁条的宽度，以及硬势垒的高度和宽度对石墨烯纳米结构中电子的电导和谷极化的影响。数值计算结果表明，在研究的石墨烯纳米结构中可获得较大的谷极化，而且谷极化的大小可通过改变磁场的大小、铁磁条的宽度、硬势垒的高度和宽度来控制。该研究可加深对石墨烯中谷依赖的电子输运性质的理解，有助于基于石墨烯的谷电子器件设计。
he transfer-matrix method is used to study the effects of the ferromagnetic stripe and the strained barrier on the valley-dependent electronic transport properties.We focus on analyzing the effects of the magnitude of the magnetic field generated by the ferromagnetic metal(FM) stripe,the width of the FM stripe as well as the height and the width of the strained barrier on the conductance and the valley polarization of electrons in a graphene nanostructure.The numerical results indicate that the considerable valley polarization can be achieved in the studied graphene nanostructure,and the degree of the valley polarization can be controlled by changing the magnitude of the magnetic field,the width of the FM stripe,the height and the width of the strained barrier.This study can deepen the understanding of the valley-dependent electronic transport properties in graphene and contribute to the design of valleytronic devices based on graphene.
汪丹、卢建夺、王浩
物理学微电子学、集成电路
凝聚态物理石墨烯铁磁条硬势垒谷极化
ondensed matter physicsGrapheneFerromagnetic stripeStrained barrierValley polarization
汪丹,卢建夺,王浩.铁磁条和硬势垒对谷依赖的电子输运性质的影响[EB/OL].(2025-02-24)[2025-08-18].http://www.paper.edu.cn/releasepaper/content/202502-86.点此复制
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