On-chip erbium-doped lithium niobate waveguide amplifiers
On-chip erbium-doped lithium niobate waveguide amplifiers
Lithium niobate on insulator (LNOI), as an emerging and promising opticalintegration platform, faces shortages of on-chip active devices includinglasers and amplifiers. Here, we report the fabrication on-chip erbium-dopedLNOI waveguide amplifiers based on electron beam lithography and inductivelycoupled plasma reactive ion etching. A net internal gain of ~30 dB/cm incommunication band was achieved in the fabricated waveguide amplifiers underthe pump of a 974-nm continuous laser. This work develops new active devices onLNOI and will promote the development of LNOI integrated photonics.
Lithium niobate on insulator (LNOI), as an emerging and promising opticalintegration platform, faces shortages of on-chip active devices includinglasers and amplifiers. Here, we report the fabrication on-chip erbium-dopedLNOI waveguide amplifiers based on electron beam lithography and inductivelycoupled plasma reactive ion etching. A net internal gain of ~30 dB/cm incommunication band was achieved in the fabricated waveguide amplifiers underthe pump of a 974-nm continuous laser. This work develops new active devices onLNOI and will promote the development of LNOI integrated photonics.
Guoquan Zhang、Chen Yang、Qiang Luo、Ru Zhang、Jingjun Xu、Yongfa Kong、Zhenzhong Hao、Fang Bo、Dahuai Zheng
光电子技术半导体技术微电子学、集成电路
Guoquan Zhang,Chen Yang,Qiang Luo,Ru Zhang,Jingjun Xu,Yongfa Kong,Zhenzhong Hao,Fang Bo,Dahuai Zheng.On-chip erbium-doped lithium niobate waveguide amplifiers[EB/OL].(2023-02-19)[2025-08-14].https://chinaxiv.org/abs/202303.01538.点此复制
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