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Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model

Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model

来源:Arxiv_logoArxiv
英文摘要

Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of growth. We investigate the effect of activation barriers hindering attachment of material to existing islands on the density and size distribution of islands in a model of homoepitaxial growth on Si(111)7x7 reconstructed surface. An unusual distribution of island sizes peaked around "magic" sizes and a steep dependence of the island density on the growth rate are observed. "Magic" islands (of a different shape as compared to those obtained during growth) are observed also during surface equilibration.

M. Kaestner、J. Myslivecek、T. Jarolimek、B. Voigtlaender、P. Smilauer

10.1103/PhysRevB.60.13869

物理学晶体学材料科学

M. Kaestner,J. Myslivecek,T. Jarolimek,B. Voigtlaender,P. Smilauer.Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model[EB/OL].(1999-05-06)[2025-08-13].https://arxiv.org/abs/cond-mat/9905077.点此复制

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