Topological Electronic Structure and Transport Properties of the Distorted Rutile-type WO$_2$

We elucidate the transport properties and electronic structures of distorted rutile-type WO2. Electrical resistivity and Hall effect measurements of high-quality single crystals revealed the transport property characteristics of topological materials; these characteristics included an extremely large magnetoresistance of 13,200% (2 K and 9 T) and a very high carrier mobility of 25,700 cm2 V-1 s-1 (5 K). First-principles calculations revealed Dirac nodal lines (DNL) near the Fermi energy in the electronic structure when spin-orbit interactions (SOIs) were absent. Although these DNLs mostly disappeared in the presence of SOIs, band crossings at high-symmetry points in the reciprocal space existed as Dirac points. Furthermore, DNLs protected by nonsymmorphic symmetry persisted on the ky = {\pi}/b plane. The unique transport properties originating from the topological electronic structure of chemically and thermally stable WO2 could represent an opportunity to investigate the potential electronic applications of the material.