|国家预印本平台
首页|Anisotropic Field Suppression of Morin Transition Temperature in Epitaxially Grown Hematite Thin Films

Anisotropic Field Suppression of Morin Transition Temperature in Epitaxially Grown Hematite Thin Films

Anisotropic Field Suppression of Morin Transition Temperature in Epitaxially Grown Hematite Thin Films

来源:Arxiv_logoArxiv
英文摘要

We have demonstrated the existence of the Morin transition in epitaxially grown hematite thin films exceeding a critical thickness. The Morin transition temperature can be suppressed by magnetic fields applied both parallel and perpendicular to the Dzyaloshinskii-Moriya (DM) vector, exhibiting a distinct anisotropic behavior that is consistent with bulk hematite crystals. Detailed analysis explains the anisotropic behavior and provides a method for determining the DM strength, which remains nearly constant across the sample thickness over four orders of magnitude. Our findings obtained with transport measurements offer a valuable approach for studying antiferromagnetic spin configurations in thin films and nanodevices.

Haoyu Liu、Hantao Zhang、Josiah Keagy、Qinwu Gao、Letian Li、Junxue Li、Ran Cheng、Jing Shi

10.1103/PhysRevMaterials.9.034410

物理学晶体学

Haoyu Liu,Hantao Zhang,Josiah Keagy,Qinwu Gao,Letian Li,Junxue Li,Ran Cheng,Jing Shi.Anisotropic Field Suppression of Morin Transition Temperature in Epitaxially Grown Hematite Thin Films[EB/OL].(2025-04-04)[2025-06-08].https://arxiv.org/abs/2504.03892.点此复制

评论