基于卤化物钙钛矿离子迁移的器件微缩化前景研究
Ion-Migration-Enabled Scaling of Halide Perovskite Devices: Mechanisms, Architectures, and Prospects
杨一鸣 1何潮 1范陶源1
作者信息
- 1. 大连理工大学集成电路学院，大连 116620
- 折叠
摘要
卤化物钙钛矿材料因其可调带隙、优异载流子迁移率等特性成为光电器件研究热点。研究发现，其离子迁移行为具有"双刃剑"效应：既会引发界面降解导致器件性能衰退，又能通过动态离子重构赋予材料可调控的光电特性。本研究采用化学气相沉积法（CVD）制备高质量CsPbBr?单晶纳米线（直径100 nm-2000 nm，长度>20 μm），系统研究了亚微米尺度下离子迁移的效应。实验发现，在3 V/μm电场极化下，纳米线器件表现出显著的离子迁移诱导光伏效应，产生3.00 nA的短路电流和0.55 V的开路电压。进一步研究表明，CsPbBr?纳米线极化后的I-V滞回特性与RRAM阈值开关行为匹配，可构建亚微米非易失性存储单元。这一发现不仅深化了对钙钛矿离子迁移行为的认识，更为开发新型可调控光电器件提供了重要参考。
Abstract
Halide perovskite materials have emerged as a research hotspot in optoelectronics due to their tunable bandgaps and superior charge carrier mobilities. Studies reveal that their ionic migration behavior exhibits a dual-edged sword effect: while triggering interfacial degradation that deteriorates device performance, it simultaneously enables dynamic ionic reconstruction to confer tunable optoelectronic properties. In this work, high-quality CsPbBr? single-crystalline nanowires (diameters: 100 nm-2000 nm, lengths >20 μm) were fabricated via chemical vapor deposition (CVD) for systematic investigation of ionic migration effects at submicron scales. Under electric field poling at 3 V/μm, the nanowire devices demonstrated pronounced ion-migration-induced photovoltaic effects, generating a short-circuit current of 3.00 nA and an open-circuit voltage of 0.55 V. Further investigations revealed that the I-V hysteresis characteristics of polarized CsPbBr? nanowires align with the threshold switching behavior of resistive random-access memory (RRAM), enabling the construction of submicron-scale nonvolatile memory cells. These findings not only deepen the understanding of ionic dynamics in perovskites but also provide critical insights for developing novel reconfigurable optoelectronic devices.关键词
卤化物钙钛矿/纳米线/离子迁移/储能器件/阻变存储器Key words
Halide perovskites/Nanowires/Ion migration/Energy storage devices/RRAM引用本文复制引用
杨一鸣,何潮,范陶源.基于卤化物钙钛矿离子迁移的器件微缩化前景研究[EB/OL].(2025-04-11)[2026-03-17].http://www.paper.edu.cn/releasepaper/content/202504-107.学科分类
电工材料/半导体技术/光电子技术/电子元件、电子组件
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