基于卤化物钙钛矿离子迁移的器件微缩化前景研究

Halide perovskite materials have emerged as a research hotspot in optoelectronics due to their tunable bandgaps and superior charge carrier mobilities. Studies reveal that their ionic migration behavior exhibits a dual-edged sword effect: while triggering interfacial degradation that deteriorates device performance, it simultaneously enables dynamic ionic reconstruction to confer tunable optoelectronic properties. In this work, high-quality CsPbBr? single-crystalline nanowires (diameters: 100 nm-2000 nm, lengths >20 μm) were fabricated via chemical vapor deposition (CVD) for systematic investigation of ionic migration effects at submicron scales. Under electric field poling at 3 V/μm, the nanowire devices demonstrated pronounced ion-migration-induced photovoltaic effects, generating a short-circuit current of 3.00 nA and an open-circuit voltage of 0.55 V. Further investigations revealed that the I-V hysteresis characteristics of polarized CsPbBr? nanowires align with the threshold switching behavior of resistive random-access memory (RRAM), enabling the construction of submicron-scale nonvolatile memory cells. These findings not only deepen the understanding of ionic dynamics in perovskites but also provide critical insights for developing novel reconfigurable optoelectronic devices.