碳化硅中子辐照缺陷的仿真研究

In this paper, we employs Geant4 simulation tools to investigate the energy spectrum of displacement defects and their reaction processes in silicon carbide materials subjected to different irradiation energies ranging from 0.1 MeV to 1 MeV. Simulation results reveal that increasing irradiation energy leads to changes in the proportion of different displacement defects and broadens the energy range of the defect spectrum. Concurrently, LAMMPS simulation tools were utilized to simulate cascade collisions generated by 7.5 keV Si PKA and 3.5 keV C PKA. The findings indicate that following thermodynamic evolution, defects produce secondary cascade collisions, resulting in increased defect concentration and the formation of defect clusters. This research elucidates the effects of fast neutron irradiation on silicon carbide materials from different simulation perspectives, providing a theoretical basis for enhancing the radiation resistance of devices.