氧化镓薄膜的制备及在X射线探测中的应用

With the emergence of high-tech such as quantum information and artificial intelligence as the mainstream of the times, semiconductor materials, process technology systems, and multifunctional device technologies are constantly being updated. Traditional semiconductor materials are no longer able to meet the needs of applications in terms of performance, cost, and other aspects. Gallium oxide, as a new type of ultra wide bandgap semiconductor material, has the characteristics of high breakdown field strength, high thermal stability, and high X-ray absorption coefficient compared to silicon and silicon carbide, showing great potential for application in X-ray detection. This article uses low-cost carbon thermal reduction method to prepare single (-201) crystal plane oriented gallium oxide thin films on sapphire substrates, and explores the effect of substrate temperature on film growth. As the substrate temperature increases, the growth rate of gallium oxide thin films increases and the crystal quality improves. A planar MSM structure detector was prepared based on the growth of gallium oxide thin films, and the response characteristics of the device to X-rays were systematically tested. The test results show that the device exhibits good response characteristics and time stability under different radiation dose rates and bias voltages. It has high sensitivity and response speed under a bias voltage of 100V, providing direction reference for the performance optimization of low-cost gallium oxide based X-ray detectors and even imaging devices in the future.