碳化硅BJT型α粒子探测器的设计与响应特性仿真

With the development of modern technology, effective detection of alpha particles is crucial in fields such as nuclear power plant safety, high-energy particle research, and controllable nuclear fusion. Silicon carbide, with its high thermal conductivity, wide bandgap, and high critical displacement energy, has demonstrated significant advantages in extreme environmental radiation detection such as high temperature and strong irradiation, breaking through the limitations of traditional semiconductor materials in application fields and opening up new application scenarios for alpha particle detection. This article constructs a simulation model of a silicon carbide BJT type alpha particle detector and simulates the alpha particle detection effect of the device. Innovatively proposed a double-layer base structure design scheme, effectively balancing the inherent contradiction between maximum current gain and alpha particle range. By optimizing the parameters in each region, the device can still achieve a maximum current gain of 90 when the base thickness is increased to 19 μ m. Finally, the optimized BJT was subjected to alpha particle transient response simulation, and as the applied bias voltage of the device increased, the transient response current continued to increase. Under an applied bias voltage of 100 V, the peak value of the output α transient response current of the device reaches 16mA.