单根碳纳米管场效应晶体管的制备

arbon nanotubes (CNTs) are one-dimensional semiconductor materials, which are regarded as key materials for the continuation of Moore\'s law and the opening of the post-silicon-based era due to their ultra-high mobility (200,000 cm2/(V?s), more than 10 times higher than silicon), high thermal conductivity (3000 W/(mK)), nanometre thickness (1~2 nm) and flexibility. However, in practical applications, the ultra-small size of carbon nanotubes hinders the construction of field-effect transistors, which affects the further research on the performance of carbon nanotubes. In this paper, a single carbon nanotube field-effect transistor with back-gate structure is proposed, with carbon nanotubes as the channel material, 300 nm silicon oxide as the gate dielectric layer, and P-type doped silicon substrate as the gate. By testing the transfer characteristics, the initial carbon nanotubes exhibit bipolar conductive characteristics, and the switching ratio of the initial device is 10E3. The fabrication method of this single carbon nanotube FET is easy to operate, and the back-gate structure is adopted, which is convenient for the modification and doping of CNT as a channel material, which lays a foundation for further deepening the characteristics of carbon nanotubes.