|国家预印本平台
| 注册
首页|Indirect Tunneling Enabled Spontaneous Time-Reversal Symmetry Breaking and Josephson Diode Effect in TiN/Al$_2$O$_3$/Hf$_{0.8}$Zr$_{0.2}$O$_2$/Nb tunnel junctions

Indirect Tunneling Enabled Spontaneous Time-Reversal Symmetry Breaking and Josephson Diode Effect in TiN/Al$_2$O$_3$/Hf$_{0.8}$Zr$_{0.2}$O$_2$/Nb tunnel junctions

Shaoqing Ding Jinyuan Yao Zhen Bi Quyen Tran Bangzhi Liu Qi Li Susan Trolier-McKinstry Thomas N. Jackson Ying Liu

Arxiv_logoArxiv

Indirect Tunneling Enabled Spontaneous Time-Reversal Symmetry Breaking and Josephson Diode Effect in TiN/Al$_2$O$_3$/Hf$_{0.8}$Zr$_{0.2}$O$_2$/Nb tunnel junctions

Shaoqing Ding Jinyuan Yao Zhen Bi Quyen Tran Bangzhi Liu Qi Li Susan Trolier-McKinstry Thomas N. Jackson Ying Liu

作者信息

引用本文复制引用

Shaoqing Ding,Jinyuan Yao,Zhen Bi,Quyen Tran,Bangzhi Liu,Qi Li,Susan Trolier-McKinstry,Thomas N. Jackson,Ying Liu.Indirect Tunneling Enabled Spontaneous Time-Reversal Symmetry Breaking and Josephson Diode Effect in TiN/Al$_2$O$_3$/Hf$_{0.8}$Zr$_{0.2}$O$_2$/Nb tunnel junctions[EB/OL].(2025-08-20)[2025-12-14].https://arxiv.org/abs/2504.16987.

学科分类

电工基础理论/半导体技术/电工材料

评论

首发时间 2025-08-20
下载量:0
|
点击量:10
段落导航相关论文