|国家预印本平台
首页|Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices

Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices

Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices

来源:Arxiv_logoArxiv
英文摘要

The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moir\'e engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.

Yi Yan、Shun Wang、Changshuai Lan、Qiyang Song、Qiao Chen、Chengyu Yan

10.1002/smll.202501428 10.1002/smll.202501428 10.1002/smll.202501428 10.1002/smll.202501428

半导体技术微电子学、集成电路

Yi Yan,Shun Wang,Changshuai Lan,Qiyang Song,Qiao Chen,Chengyu Yan.Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices[EB/OL].(2025-04-25)[2025-05-18].https://arxiv.org/abs/2504.18170.点此复制

评论