化学气相沉积法生长氧化镓薄膜

Monoclinic phase gallium oxide is a semiconductor material with wide bandgap, high breakdown field strength and excellent chemical stability, which is widely used in power electronic devices, deep ultraviolet detectors, gas sensors, transparent conductive films, and has important potential in energy, information, aerospace and medical fields. In this paper, the process optimization and the control mechanism of photoelectric properties of gallium oxide thin films prepared by chemical vapor deposition (CVD) were systematically studied. By adjusting the reaction temperature and the pressure of the reaction chamber, the effects of temperature-pressure synergy on the crystallization quality, surface morphology and photoelectric properties of the thin film were analyzed. The experimental results show that under atmospheric pressure conditions, the crystalline quality of the film increases significantly with the increase of temperature, but the temperature is too high, which will cause the surface micro-nano structure to decrease, resulting in the decrease of flatness. Pressure optimization experiments show that the thin film grown at 5000 Pa has both high density and single-phase purity. The photoelectric performance test showed that the film prepared by the optimal process had good light response characteristics. In addition, the film exhibits a stable helioblind UV response from room temperature to 600 degrees celsius, which verifies its suitability to high-temperature environments. This study provides an important process reference for the application of gallium oxide thin films in solar blind ultraviolet detectors and high-temperature power electronic devices, and highlights the technical advantages of CVD method in the low-cost and large-scale preparation of wide bandgap semiconductor materials.