具有JTE结构的碳化硅X射线探测器设计与性能仿真

With the development of radiation detection technology towards high temperature and strong radiation conditions, wide band gap semiconductor X-ray sensing technology is gradually becoming the key technology of extreme environment detection. SiC has become a preferred material for constructing radiation-resistant X-ray detectors due to its high carrier ionization energy and outstanding lattice displacement threshold. In this paper, based on SentaurusTCAD software, the low gain avalanche detector (LGAD) with a thickness of 110μm is optimized and simulated by using the junction termination technology. The results show that the optimized detector has a wider operating voltage range ( 1000V-4100V ) and a response current gain range of 1.7-14.2 for X-rays with an energy of 5.9keV.