具有JTE结构的碳化硅X射线探测器设计与性能仿真
Design and performance simulation of Silicon Carbide X-ray detector with JTE structer
王富 1夏晓川1
作者信息
- 1. 大连理工大学集成电路学院，大连 116620
- 折叠
摘要
随着辐射探测技术向高温强辐射工况的纵深发展，宽禁带半导体X射线传感技术正逐步成为极端环境探测的关键技术。碳化硅凭借其高载流子电离能与突出的晶格位移阈值，已成为构建耐辐射X射线探测器的优选材料。本文基于SentaurusTCAD软件，运用结终端技术对110μm厚的LGAD型探测器进行了优化与仿真，结果显示优化的探测器具有更宽的工作电压范围(1100V-4100V)，对能量为5.9keV的X射线具有1.7-14.2响应电流增益范围。Abstract
With the development of radiation detection technology towards high temperature and strong radiation conditions, wide band gap semiconductor X-ray sensing technology is gradually becoming the key technology of extreme environment detection. SiC has become a preferred material for constructing radiation-resistant X-ray detectors due to its high carrier ionization energy and outstanding lattice displacement threshold. In this paper, based on SentaurusTCAD software, the low gain avalanche detector (LGAD) with a thickness of 110μm is optimized and simulated by using the junction termination technology. The results show that the optimized detector has a wider operating voltage range ( 1000V-4100V ) and a response current gain range of 1.7-14.2 for X-rays with an energy of 5.9keV. 关键词
碳化硅/结终端/低增益/X射线探测Key words
SiC/JTE/LGAD/X-ray detector?????引用本文复制引用
王富,夏晓川.具有JTE结构的碳化硅X射线探测器设计与性能仿真[EB/OL].(2025-05-07)[2025-12-19].http://www.paper.edu.cn/releasepaper/content/202505-8.学科分类
物理学/微电子学、集成电路
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