碳化硅深双沟槽超结MOSFET性能仿真

Silicon carbide (SiC) MOSFETs are an ideal choice for high-voltage power devices due to their high breakdown voltage and low-loss characteristics. Compared to silicon IGBTs with equivalent voltage ratings, SiC MOSFETs exhibit advantages such as lower switching loss, higher switching frequency, and superior high-temperature operation capabilities. This paper proposes a deep double-trench superjunction SiC MOSFET (DDT-SJMOSFET) featuring a co-designed carrier storage layer (CSL) and full superjunction structure. The influence of CSL doping concentration, thickness, and superjunction doping concentration on the device\'s electrical characteristics was systematically analyzed through TCAD simulations. The results demonstrate that the introduction of the CSL layer effectively suppresses superjunction charge imbalance by reconstructing carrier concentration gradients, while the integrated full superjunction design optimizes conduction and voltage-blocking performance while maintaining switching characteristics. Comparative analysis reveals that under specific parameters: CSL thickness of 1.4 μm, CSL doping concentration of 4.8×10^16 cm^-3, and superjunction doping concentration of 4.0×10^16 cm^-3,the key electrical characteristics such as breakdown voltage, subthreshold swing, and threshold voltage stabilize, with the specific on-resistance remaining at 2.3 mΩ cm^2.