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Fractional Statistics and Electron Transfer at Topological Defects

Fractional Statistics and Electron Transfer at Topological Defects

来源:Arxiv_logoArxiv
英文摘要

We develop a theoretical framework for electron transfer (ET) at graphene defects, treating the surface as a Dirac cone with a localized defect state coupled to a vibrational environment. Using a polaron transformation combined with a modified density of states, we derive an explicit expression for the ET rate that incorporates both vibrational reorganization and fractionalized quasiparticle statistics. We show that fractional statistics, modeled through a power-law density of states, suppress low-energy ET near resonance and introduce tunable deviations from conventional Marcus-like kinetics. Our results suggest that strain, defect engineering, or chemical modification could stabilize fractional excitations in graphene-based catalysts, offering new strategies for controlling surface reactivity. These findings provide a foundation for future experimental and computational investigations into the role of topology and fractional statistics in chemical electron transfer.

Eric R. Bittner

物理学

Eric R. Bittner.Fractional Statistics and Electron Transfer at Topological Defects[EB/OL].(2025-05-08)[2025-07-16].https://arxiv.org/abs/2505.05617.点此复制

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