Tunable Chern Insulators in Moir\'e-Distant and Moir\'e-Proximal Rhombohedral Pentalayer Graphene

Rhombohedral-stacked multilayer graphene aligned with hexagonal boron nitride has emerged as an excellent platform for investigating exotic quantum states arising from the interplay between electron correlations and topology. Here, we report the electrical transport properties of a rhombohedral pentalayer graphene/hexagonal boron nitride moir\'e device with a twist angle of 1.02{\deg} and a moir\'e period of approximately 10.1 nm. In this device, we observe anomalous Hall effects and integer Chern insulators in both moir\'e-proximal and moir\'e-distant regimes. Specifically, in the moir\'e-distant regime, an integer Chern insulator with Chern number C = 1 emerges at moir\'e filling {\nu} = 1 under a moderate magnetic field. In the moir\'e-proximal regime, we identify a rich set of topological and correlated phases near {\nu} = 1, including integer Chern insulator states with C = \pm 1 and trivial insulators, and they are highly sensitive to both the applied displacement field and magnetic field. Moreover, at {\nu} = 2 in the moir\'e-proximal regime, Chern insulators with C = \pm 1 has also been observed. Our results underscore the sensitivity of topological quantum states to the moir\'e potential strength and highlight the importance of twist-angle engineering in exploring novel quantum states in rhombohedral-stacked multilayer graphene moir\'e systems.