Scalable alloy-based sputtering of high-conductivity PdCoO$_2$ for advanced interconnects
Scalable alloy-based sputtering of high-conductivity PdCoO$_2$ for advanced interconnects
As integrated circuits continue to scale down, the search for new metals is becoming increasingly important due to the rising resistivity of traditional copper-based interconnects. A layered oxide PdCoO$_2$ is one of the candidate materials for interconnects, having bulk ab-plane conductivity exceeding that of elemental Al. Despite its potential, wafer-scale vacuum deposition of PdCoO$_2$, crucial for interconnect applications, has not yet been reported. In this study, we succeeded in the scalable growth of c-axis oriented PdCoO$_2$ thin films via reactive sputtering from Pd-Co alloy targets. Our method paves the way to harness the unique properties of PdCoO$_2$ in semiconductor devices.
Takayuki Harada、Zuin Ping Lily Ang、Yuki Sakakibara、Takuro Nagai、Yasushi Masahiro
半导体技术微电子学、集成电路电子元件、电子组件
Takayuki Harada,Zuin Ping Lily Ang,Yuki Sakakibara,Takuro Nagai,Yasushi Masahiro.Scalable alloy-based sputtering of high-conductivity PdCoO$_2$ for advanced interconnects[EB/OL].(2025-05-20)[2025-06-03].https://arxiv.org/abs/2505.14094.点此复制
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