Simulation of charge transport at the surface of planar silicon sensors

Radiation-hard silicon sensors used in high-energy physics require a high electric field and are susceptible to surface breakdown. This study aims to improve the understanding of the underlying mechanisms by developing new methods to probe the electric field at surface near the sensor's edge. For planar sensors, avalanche breakdown primarily occurs at the Si-SiO2 interface, where localized electric field peaks can form between the guard ring and the edge. Accurate simulations are challenging and it is essential to validate simulation parameters by comparing the simulation results to measurements. In this work, the electrical behavior of the edge region of planar silicon diodes was simulated using Synopsis TCAD. Transient Current Technique (TCT) simulations were performed in both TCAD and Allpix Squared, and compared to measurements. Additionally, laser scans over the edge region were performed in Allpix Squared to evaluate the simulated surface electric field and charge collection efficiency.