Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics
Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics
Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.
W. F. Holmes-Hewett、J. D. Miller、H. G. Ahmad、S. Granville、B. J. Ruck
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W. F. Holmes-Hewett,J. D. Miller,H. G. Ahmad,S. Granville,B. J. Ruck.Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics[EB/OL].(2025-05-21)[2025-06-07].https://arxiv.org/abs/2505.15238.点此复制
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