X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm
X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm
Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies facilitate depletion of the charge sensitive volume. TJ-Monopix2 and LF-Monopix2 are the most recent large-scale chips in their respective development line, aiming for the ATLAS Inner Tracker outer layer requirements. Those include a tolerance to ionizing radiation of up to 100$\,$Mrad. It was evaluated by irradiating both devices with X-rays to the corresponding ionization dose, showing no significant degradation of the performance at 100$\,$Mrad and continuous operability throughout the irradiation campaign.
Christian Bespin、Marlon Barbero、Pierre Barrillon、Patrick Breugnon、Ivan Caicedo、Yavuz Degerli、Jochen Dingfelder、Tomasz Hemperek、Toko Hirono、Hans Krüger、Fabian Hügging、Konstantinos Moustakas、Patrick Pangaud、Heinz Pernegger、Petra Riedler、Piotr Rymaszewski、Lars Schall、Philippe Schwemling、Walter Snoeys、Tianyang Wang、Norbert Wermes、Sinou Zhang
半导体技术微电子学、集成电路
Christian Bespin,Marlon Barbero,Pierre Barrillon,Patrick Breugnon,Ivan Caicedo,Yavuz Degerli,Jochen Dingfelder,Tomasz Hemperek,Toko Hirono,Hans Krüger,Fabian Hügging,Konstantinos Moustakas,Patrick Pangaud,Heinz Pernegger,Petra Riedler,Piotr Rymaszewski,Lars Schall,Philippe Schwemling,Walter Snoeys,Tianyang Wang,Norbert Wermes,Sinou Zhang.X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm[EB/OL].(2025-06-05)[2025-07-17].https://arxiv.org/abs/2506.04776.点此复制
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