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基于Multisim的晶体管放大电路优化设计

中文摘要英文摘要

针对晶体管放大电路在温度漂移、噪声抑制及带宽扩展方面的挑战,本文提出一种基于Multisim的优化设计方法。通过动态偏置技术结合恒流源负载,解决了静态工作点稳定性问题;采用共射-共基级联结构与恒流源共享技术,实现了高增益与宽频特性;互补推挽输出级通过动态偏置补偿温度影响,抑制了交越失真。Multisim仿真验证表明,优化后电路在-40℃至85℃范围内增益波动<5%,增益带宽积达5.2MHz,压摆率32V/μs,噪声系数低于2dB,满足工业物联网高精度传感需求。研究为模拟电路的多参数耦合优化提供了新思路。

o address the challenges of temperature drift, noise suppression, and bandwidth expansion in transistor amplifier circuits, this paper proposes an optimization design method based on Multisim. By combining dynamic biasing technology with constant-current source loads, the stability of the quiescent operating point is improved. The common-emitter-common-base cascaded structure and shared constant-current source biasing technology are adopted to achieve high gain and wide-frequency characteristics. The complementary push-pull output stage compensates for temperature effects through dynamic biasing to suppress crossover distortion. Multisim simulation verification shows that the optimized circuit exhibits a gain fluctuation of <5% in the temperature range of -40 C to 85 C, a gain-bandwidth product of 5.2 MHz, a slew rate of 32 V/μs, and a noise figure below 2 dB, meeting the high-precision sensing requirements of industrial IoT. This study provides new insights for multi-parameter coupling optimization in analog circuit design.

王浩颖、田原布赫、赵鑫宇、于洪仕

辽宁工程技术大学电子与信息工程学院,葫芦岛市,125105辽宁工程技术大学电子与信息工程学院,葫芦岛市,125105辽宁工程技术大学电子与信息工程学院,葫芦岛市,125105辽宁工程技术大学电子与信息工程学院,葫芦岛市,125105

电子电路半导体技术

晶体管放大电路动态偏置Multisim仿真噪声抑制?????

ransistor amplifier circuitDynamic biasingMultisim simulationNoise suppression

王浩颖,田原布赫,赵鑫宇,于洪仕.基于Multisim的晶体管放大电路优化设计[EB/OL].(2025-06-17)[2025-07-18].http://www.paper.edu.cn/releasepaper/content/202506-54.点此复制

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