Designer Heavy Fermions in Incommensurate $\bf{Nb_3Cl_8}$/Graphene van der Waals Heterostructures
Designer Heavy Fermions in Incommensurate $\bf{Nb_3Cl_8}$/Graphene van der Waals Heterostructures
Heavy fermion systems, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a general strategy for engineering heavy fermions in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb$_3$Cl$_8$) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap ($Î\approx30$ meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits nearly order-of-magnitude electron effective mass dichotomy between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes a scalable platform for designing heavy fermion by replacing the itinerant electron materials, with implications for engineering topological superconductivity and quantum criticality in low-dimensional systems.
Yuchen Gao、Wenjie Zhou、Fan Yang、Zhijie Ma、Hansheng Xu、Xinyue Huang、Kenji Watanabe、Takashi Taniguchi、Youguo Shi、Yu Ye
物理学
Yuchen Gao,Wenjie Zhou,Fan Yang,Zhijie Ma,Hansheng Xu,Xinyue Huang,Kenji Watanabe,Takashi Taniguchi,Youguo Shi,Yu Ye.Designer Heavy Fermions in Incommensurate $\bf{Nb_3Cl_8}$/Graphene van der Waals Heterostructures[EB/OL].(2025-06-27)[2025-07-21].https://arxiv.org/abs/2506.21837.点此复制
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