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Fast Simulation of Damage Diffusion Distribution in Scanning Transmission Electron Microscopy

Fast Simulation of Damage Diffusion Distribution in Scanning Transmission Electron Microscopy

来源:Arxiv_logoArxiv
英文摘要

Scanning Transmission Electron Microscopy (STEM) is a critical tool for imaging the properties of materials and biological specimens at atomic scale, yet our understanding of relevant electron beam damage mechanisms is incomplete. Recent studies suggest that certain types of damage can be modelled as a diffusion process. However, numerical simulation of such diffusion processes has remained computationally intensive. This work introduces a high-performance C++ framework for simulating damage diffusion process in STEM that combines efficient numerical computation, advanced visualisations, and multithreading to achieve efficient runtime while maintaining accuracy.

Amir Javadi Rad、Amirafshar Moshtaghpour、Dongdong Chen、Angus I. Kirkland

电子技术应用

Amir Javadi Rad,Amirafshar Moshtaghpour,Dongdong Chen,Angus I. Kirkland.Fast Simulation of Damage Diffusion Distribution in Scanning Transmission Electron Microscopy[EB/OL].(2025-06-30)[2025-07-09].https://arxiv.org/abs/2507.00294.点此复制

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