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Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex

Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex

来源:Arxiv_logoArxiv
英文摘要

The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized samplings of valley energy distributions tend to dramatically overestimate the average valley coupling. But we find that knowledge of the valley phase, in addition to the valley splitting, can significantly improve our estimates. Motivated by this understanding, we propose a novel method to probe the valley phase landscape across the quantum well using simple $g$-factor measurements. An important calibration step in this procedure is to measure $g$ in a loop enclosing a valley vortex, where the valley phase winds by $\pm 2π$ around a zero of the valley splitting. This proposal establishes an important new tool for probing spin qubits, and it can be implemented in current experiments.

Benjamin D. Woods、Merritt P. Losert、Nasir R. Elston、M. A. Eriksson、S. N. Coppersmith、Robert Joynt、Mark Friesen

物理学

Benjamin D. Woods,Merritt P. Losert,Nasir R. Elston,M. A. Eriksson,S. N. Coppersmith,Robert Joynt,Mark Friesen.Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex[EB/OL].(2025-07-07)[2025-07-17].https://arxiv.org/abs/2507.05160.点此复制

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