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Anyon-trions in atomically thin semiconductor heterostructures

Anyon-trions in atomically thin semiconductor heterostructures

来源:Arxiv_logoArxiv
英文摘要

The study of anyons in topologically ordered quantum systems has mainly relied on edge-state interferometry. However, realizing controlled braiding of anyons necessitates the ability to detect and manipulate individual anyons within the bulk. Here, we propose and theoretically investigate a first step toward this goal by demonstrating that a long-lived, optically generated interlayer exciton can bind to a quasihole in a fractional quantum Hall state, forming a composite excitation we term an anyon-trion. Using exact diagonalization, we show that mobile anyon-trions possess a binding energy of approximately 0.5 meV, whereas static anyon-trions exhibit a binding energy of about 0.9 meV, that is linearly proportional to the quasiholes fractional charge. An experimental realization based on photoluminescence from localized interlayer excitons in a quantum twisting microscope setup should allow for a direct optical observation of anyon-trions.

Nader Mostaan、Nathan Goldman、Ataç İmamoğlu、Fabian Grusdt

物理学

Nader Mostaan,Nathan Goldman,Ataç İmamoğlu,Fabian Grusdt.Anyon-trions in atomically thin semiconductor heterostructures[EB/OL].(2025-07-11)[2025-07-24].https://arxiv.org/abs/2507.08933.点此复制

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