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Learning in Memristive Neural Networks

Learning in Memristive Neural Networks

来源:Arxiv_logoArxiv
英文摘要

Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used to implement Artificial Neural Networks (ANNs) in hardware. For this, one can use a class of memristive circuits called crossbar arrays. In this paper, we describe a circuit implementation of an ANN and resolve three questions concerning such an implementation. In particular, we show (1) how to evaluate the implementation at an input, (2) how the resistance values of the memristors at a given time can be determined from external (current) measurements, and (3) how the resistances can be steered to desired values by applying suitable external voltages to the network. The results will be applied to two examples: an academic example to show proof of concept and an ANN that was trained using the MNIST dataset.

H. M. Heidema、H. J. van Waarde、B. Besselink

电子元件、电子组件电子电路

H. M. Heidema,H. J. van Waarde,B. Besselink.Learning in Memristive Neural Networks[EB/OL].(2025-07-21)[2025-08-10].https://arxiv.org/abs/2507.15324.点此复制

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