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Quasi-1D Electronic Metadevices with Enhanced Electrical Properties

Quasi-1D Electronic Metadevices with Enhanced Electrical Properties

来源:Arxiv_logoArxiv
英文摘要

Electronic metadevices leveraging sub-wavelength metallic features have shown great potential for high-frequency switching. Theoretical analysis based on a one-dimensional (1D) model indicates that reducing the size of subwavelength features can enhance electrical properties, such as contact resistance and switching cutoff frequency. Here, we report higher-than-expected contact resistance in electronic metadevices when the subwavelength feature size is aggressively downscaled. We attribute this effect to transverse currents in the two-dimensional electron gas (2DEG) running parallel to the stripe width. We present the first experimental demonstration of a metadevice governed by a one-dimensional model, which we refer to as a quasi-1D electronic metadevice and show that it enables enhanced electrical performance. Our findings pave the way to design next generation electronic metadevice switches with applications in future telecommunication circuits.

Abdallah Abushawish、Ziwen Huang、Mohammad Samizadeh Nikoo

电子元件、电子组件通信

Abdallah Abushawish,Ziwen Huang,Mohammad Samizadeh Nikoo.Quasi-1D Electronic Metadevices with Enhanced Electrical Properties[EB/OL].(2025-08-13)[2025-08-24].https://arxiv.org/abs/2508.09656.点此复制

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