Near-Infrared Quantum Emission from Oxygen-Related Defects in hBN
Sean Doan Sahil D. Patel Yilin Chen Jordan A. Gusdorff. Mark E. Turiansky Luis Villagomez Luka Jevremovic Nicholas Lewis Kenji Watanabe Takashi Taniguchi Lee C. Bassett Chris Van de Walle Galan Moody
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Abstract
Color centers hosted in hexagonal boron nitride (hBN) have emerged as a promising platform for single-photon emission and coherent spin-photon interfaces that underpin quantum communication and quantum networking technologies. As a wide-bandgap van der Waals material, hBN can host individual optically active quantum defects emitting across the ultraviolet to visible spectrum, but existing color centers often show broad phonon sidebands (PSBs), unstable emission, or inconvenient wavelengths. Here, we show a simple, scalable oxygen-plasma process that reproducibly creates oxygen-related single quantum emitters in hBN with blinking-free zero-phonon lines spanning the near-infrared (NIR) spectrum from 700-960 nanometers. These emitters demonstrate room-temperature operation, high brightness, and ultra-sharp cryogenic linewidths in the few-gigahertz range under non-resonant excitation. Analysis of the PSBs shows weak electron-phonon coupling and predominant zero-phonon-line emission, while first-principles calculations identify plausible oxygen-related defect configurations. These emitters provide a promising platform for indistinguishable NIR single photons towards free-space quantum networking.引用本文复制引用
Sean Doan,Sahil D. Patel,Yilin Chen,Jordan A. Gusdorff. Mark E. Turiansky,Luis Villagomez,Luka Jevremovic,Nicholas Lewis,Kenji Watanabe,Takashi Taniguchi,Lee C. Bassett,Chris Van de Walle,Galan Moody.Near-Infrared Quantum Emission from Oxygen-Related Defects in hBN[EB/OL].(2025-12-18)[2025-12-23].https://arxiv.org/abs/2512.16197.学科分类
物理学
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