Enhanced Spin Lifetime and Long-Range Spin Transport in p-Silicon using Spin Gapless Semiconductor as Ferromagnetic Injector
Nilay Maji Subham Mohanty Pujarani Dehuri Garima Yadav
作者信息
Abstract
Electrical spin injection and transport in silicon are central challenges for realizing semiconductor-based spintronic devices, particularly in p-type Si, where strong spin relaxation and interface effects often suppress detectable spin signals. Here, we report electrical spin injection, accumulation, and transport in lightly doped p-type silicon using the spin-gapless Heusler compound Mn$_2$CoAl as a ferromagnetic spin injector, separated from the p-Si channel by a thin MgO tunnel barrier in a lateral device geometry. Spin transport is systematically investigated through three-terminal (3-T) Hanle and four-terminal (4-T) nonlocal (NL) spin-valve and Hanle measurements. Clear Lorentzian Hanle signals are observed in the 3-T configuration from 5 K up to room temperature, yielding a spin lifetime of $\sim$0.68 ns at 300 K that increases to $\sim$4.11 ns at 5 K. Temperature-dependent analysis reveals a weak power-law dependence of the spin lifetime, indicating Bir--Aronov--Pikus--type spin relaxation mechanism. To validate genuine spin transport, NL spin-valve and Hanle measurements were performed, revealing well-defined spin-valve switching and controlled spin precession at 5 K. From NL Hanle fitting, a spin lifetime of $\sim$5.65 ns and a spin diffusion length of $\sim$0.82 $μ$m are extracted, confirming diffusive long-range spin transport in the p-Si channel. Although NL signals diminish at elevated temperatures due to reduced interfacial spin polarization and thermal noise, the combined 3-T and 4-T results establish spin-gapless Mn$_2$CoAl as an effective spin injector for p-type silicon. These findings highlight the potential of spin-gapless semiconductors for improving spin injection efficiency and advancing Si-compatible spintronic devices.引用本文复制引用
Nilay Maji,Subham Mohanty,Pujarani Dehuri,Garima Yadav.Enhanced Spin Lifetime and Long-Range Spin Transport in p-Silicon using Spin Gapless Semiconductor as Ferromagnetic Injector[EB/OL].(2026-02-17)[2026-02-19].https://arxiv.org/abs/2602.13118.学科分类
半导体技术/微电子学、集成电路/电子元件、电子组件
评论