低压化学气相沉积生长Ce0.14Mo0.86S2及其光电性能研究
Growth of Ce0.14Mo0.86S2 by Low Pressure Chemical Vapor Deposition and Its Photoelectric Properties
栾致勇 1梁瑶1
作者信息
- 1. 大连交通大学材料科学与工程学院，大连，116028
- 折叠
摘要
二硫化钼作为一种典型的二维过渡金属硫族化合物，因其独特的层状结构和电子结构备受关注。原子掺杂可以通过调节能带结构、电子分布从而有效提升材料的性能。本文通过低压化学气相沉积法在蓝宝石衬底上合成了大面积高结晶度的Ce0.14Mo0.86S2，并通过光学显微镜、原子力显微镜、X射线光电子能谱对薄膜材料进行进一步表征。将生长于蓝宝石衬底的Ce0.14Mo0.86S2合金通过腐蚀转移的方法转移至带有300 nm氧化层Si片上的两金电极上制成光电探测器，进行光电性能测试，其在2 V偏置电压下的响应度为35 mA/W，外量子效率为9.5%，探测率为2.3×10^6 Jones。
Abstract
Molybdenum disulfide, as a typical two-dimensional transition metal dichalcogenide, has attracted considerable attention due to its unique layered structure and electronic properties. Atomic doping can effectively enhance the performance of materials by regulating the band structure and electron distribution. In this work, large-scale high-crystallinity Ce0.14Mo0.86S2 alloys were synthesized on sapphire substrates via low-pressure chemical vapor deposition. The as-grown films were further characterized by optical microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. The Ce0.14Mo0.86S2 alloy film grown on a sapphire substrate was transferredonto the two gold electrodes on the Si substrate with a 300 nm SiO2 layer to fabricate a photodetector by an etching transfer method. Its photoelectronic properties were tested. At a bias voltage of 2 V, the photodetector has a responsivity of 35 mA/W, anexternal quantum efficiency of 9.5%, and a detectivity of 2.3×10^6 Jones.关键词
二硫化钼/过渡金属硫族化合物/低压化学气相沉积/光电性能Key words
Molybdenum disulfide/transition metal dichalcogenide/low-pressure chemical vapor deposition/photoelectric performance引用本文复制引用
栾致勇,梁瑶.低压化学气相沉积生长Ce0.14Mo0.86S2及其光电性能研究[EB/OL].(2026-04-14)[2026-04-16].http://www.paper.edu.cn/releasepaper/content/202604-119.学科分类
电工材料
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