晶体管SiSiO2界面陷阱对单粒子翻转效应的影响
Impact of Si/SiO2 interface traps on single event upset effects in transistors
高旭 1马春旺 2罗旋 1汪鹏 1宋昴 1李刚1
作者信息
- 1. 安徽大学物理学院
- 2. 河南省科学院核科学与技术研究所
- 折叠
摘要
随着晶体管的尺寸持续缩小，晶体管的界面陷阱（Interface Traps,ITs）对器件抗辐射能力的影响日益显著。为研究90 nm 晶体管Si/SiO₂界面处的ITs 对重离子诱导单粒子翻转（Single Event Upset,SEU）效应的影响，我们采用基于计算机辅助设计（Technology Computer Aided Design,TCAD）和Geant4（GEometry ANdTracking 4）联合仿真的方法，入射不同种类和能量的重离子，在考虑/不考虑ITs 的情况下，对平面和三维静态随机存储器（Static Random Access Memory,SRAM）的SEU 截面进行模拟。模拟发现：在中等线性能量传输（Linear Energy Transfer,𝐿𝐸𝑇）区间（6–50 MeV ⋅ cm2 ⋅mg−1）内，ITs 和三维结构均会使器件SEU 截面增大，且二者的叠加影响可能会进一步加剧器件对SEU 效应的敏感性；在低 𝐿𝐸𝑇 区间（< 6 MeV ⋅ cm2 ⋅mg−1）和高 𝐿𝐸𝑇 区间（> 50 MeV ⋅ cm2 ⋅mg−1），对截面影响可忽略不计。该发现为先进工艺节点下抗辐射集成电路的可靠性设计提供了仿真基础。
Abstract
With the continuous scaling down of transistor dimensions,transistor interface traps (ITs)have an increasingly great impact on the radiation hardness of devices .To investigate the impact of ITs at the Si/SiOinterfaceon heavy ion-induced Single Event Upset (SEU)in 90 nm transistors . We adopt a combined Technology ComputerAided DesignTCADand Geant4GEometry ANd Tracking 4simulation methodology,incident heavy ions ofdifferent species and energies,simulated the SEU cross-sections of planar and three-dimensional (3D)Static Random Access Memory (SRAM)with and without ITs .The simulation show that:In the medium linear energy transfer()range (650 MeV cm2 mg1),both ITs and the 3D structure increase the SEU cross-section of the device,and their synergistic effect could further enhances the devices sensitivity to the SEU effect . In the low range(< 6 MeV cm2 mg1)and high range (> 50 MeV cm2 mg1),their impact on the cross-section is negligible .This finding provides a simulation basis for the reliability design of radiation-hardened integrated circuits at advancedtechnology nodes .关键词
界面陷阱/单粒子翻转效应/SRAMKey words
Interface traps/Single event upset/SRAM引用本文复制引用
高旭,马春旺,罗旋,汪鹏,宋昴,李刚.晶体管SiSiO2界面陷阱对单粒子翻转效应的影响[EB/OL].(2026-10-11)[2026-10-13].https://chinaxiv.org/abs/202610.00048.学科分类
半导体技术
