氧化铪基铁电场效应晶体管的研究现状与未来展望
Research status and future prospects of hafnium oxide-based ferroelectric field-effect transistors
周君亮 1李建国 2霍玥潼 1闫文超 1翁泽平 3戚佳斌 2赵毅4
作者信息
- 1. 华东师范大学 信息与电子工程学院，上海 200241
- 2. 华大半导体有限公司 集成电路研究院，上海200131
- 3. 浙江大学 材料科学与工程学院，杭州 310027
- 4. 华东师范大学 信息与电子工程学院，上海 200241;华大半导体有限公司 集成电路研究院，上海200131
- 折叠
摘要
随着人工智能技术的快速发展，计算机需要处理的数据规模呈指数级增长，这对硬件存储性能提出了更高需求。传统闪存（flash）的读写速度已无法与中央处理器（central processing unit, CPU）的运算速度相匹配，由此产生的“存储墙”（memory wall）问题成为制约计算性能进一步提升的瓶颈。同时，高端消费电子产品向移动化方向的发展趋势对硬件的要求不断提高，尤其对超低功耗计算、高密度和低成本数据存储等需求日益迫切。自掺杂氧化铪（HfO2）薄膜中的铁电性被发现以来，基于氧化铪的铁电材料便在器件领域引起了广泛关注。得益于氧化铪薄膜与现代半导体制造工艺的良好兼容性及优异的可微缩性，铁电场效应晶体管（ferroelectric field-effect transistor, FeFET）在先进微电子领域重新成为研究热点，被视为突破传统存储器性能瓶颈、破解“存储墙”难题的关键候选器件。本文聚焦于FeFET在非易失性存储器中的应用，系统阐述其基本工作原理，深入探讨掺杂效应、退火工艺及冷却速率等因素对氧化铪薄膜铁电特性的影响规律。针对FeFET的可靠性问题，重点分析提升关键器件性能指标（如存储窗口、耐久性与保持时间）的机理与方法。此外，本文还综述了FeFET在材料优化（如混合铁电层、新型高k界面层）与结构创新（如铟镓锌氧化物FeFET）方面的最新研究进展。最后对FeFET的未来发展进行展望，指出氧化铪基 FeFET在嵌入式非易失性存储器、神经形态计算、高密度存储等领域具有重要的商业化应用前景，有望成为下一代微电子存储器件的核心组成部分。
Abstract
With the rapid development of artificial intelligence technology, the scale of data that computers need to process is growing exponentially, placing higher demands on hardware storage performance. The read/write speed of traditional flash memory can no longer match the computing speed of central processing units (CPU), resulting in the 'memory wall' problem, which has become a bottleneck restricting further improvement of computing performance. Meanwhile, the trend of high-end consumer electronics toward mobility continuously increases hardware requirements, especially for ultra-low power computing, high-density, and low-cost data storage. Since the ferroelectricity in doped hafnium oxide (HfO2) thin films was discovered, hafnium oxide-based ferroelectric materials have attracted widespread attention in the device field. Thanks to the good compatibility of HfO2 thin films with modern semiconductor manufacturing processes and their excellent scalability, ferroelectric field-effect transistors (FeFETs) have become a research hotspot in advanced microelectronics, regarded as a key candidate device to break through the performance bottlenecks of traditional memory and solve the 'memory wall' problem. This paper focuses on the application of FeFETs in non-volatile memory, systematically elaborating their basic working principles, and deeply exploring the influence of doping effects, annealing processes, and cooling rates on the ferroelectric properties of HfO2 thin films. Regarding the reliability issues of FeFETs, the mechanisms and methods for improving key device performance metrics (such as memory window, endurance, and retention time) are analyzed in detail. Furthermore, this paper reviews the latest research progress in material optimization (e.g., hybrid ferroelectric layers, novel high-k interfacial layers) and structural innovation (e.g., indium gallium zinc oxide FeFETs). Finally, the future development of FeFETs is discussed, pointing out that hafnium oxide-based FeFETs have significant commercial application prospects in embedded non-volatile memory, neuromorphic computing, and high-density storage, and are expected to become core components of next-generation microelectronic storage devices.关键词
氧化铪/铁电薄膜/场效应晶体管/存储窗口/耐久性/印记效应Key words
hafnium oxide/ferroelectric thin film/field-effect transistor/memory window/endurance/imprint effect引用本文复制引用
周君亮,李建国,霍玥潼,闫文超,翁泽平,戚佳斌,赵毅.氧化铪基铁电场效应晶体管的研究现状与未来展望[EB/OL].(2026-10-19)[2026-10-21].https://chinaxiv.org/abs/202610.00105.学科分类
半导体技术
