利用深能级瞬态谱技术检测多晶硅太阳能电池的深能级

basic test system of deep level transient spectroscopy (DLTS) was built up with a Booton7200 fast capacitance meter, a temperature controlled cool well and a digital phosphor oscilloscope. The C-T curve of polycrystalline silicon solar cells was carried out by the system. After repeatedly calculation and processing, we got a dlts spectrum with 4 obvious peaks at the temperatures of 130K, 164K, 226K and 271Kwhile sample was reverse biased with a voltage of -400mV. And the spectrum was changed with various reverse bias voltages. Different t1and t2 of were used to analyze dlts spectrum, and the Arrehnius curve of deep level defects in polycrystalline silicon solar cell was also given, thus to detect the relative information of impurity energy level in the polycrystalline silicon solar cells.