面向辐射探测应用的4H-SiC SBD器件电学性能仿真与优化

In this paper, the radiation characteristics of the a radiation detectors made by the third generation wide band gap semiconductor 4H-SiC materials are studied. The simulation of the electrical properties of 4H-SiC alpha particle detector is carried out by using the software-Silvaco-TCAD. The main purpose foucses on the reverse leakage current and the characteristics of C-V by changing the doping concentration of epitaxial layer; and optimize the reverse voltage about this detector. In this paper, SRIM software is used to simulate the thickness of epitaxial layer. The simulation results show that using the 5.486MeValpha particle irradiates device, the range of particles in the material is about 18.22um; the Silvaco-TCAD simulation results show that with the increase of the doping concentration in the epitaxial layer,the leakage current increases under the same reverse bias, C-V results show that with the increasing of doping concentration, when the device did not reach full depletion,under same reverse bias, the capacitance was increased; In addition, this paper simulates the reverse voltage of this device when the epitaxial is fully depleted, the result is 50V. At this point ,the energy of alpha particle can fully deposit in the detector, thus reduces energy loss.