一氧化二氮氮气等离子体处理ITO阳极的有机发光二极管性能

In this paper, the surface of the indium-tin-oxide (ITO) anode of an organic light-emitting diodes (OLED) device was treated by N2O or N2 gas in a plasma enhanced chemical vapor deposition (PECVD) instrument. Compared to the non-treated OLED device, the treatment by the N2O plasma improved the characteristics of OLED device, while the treatment by the N2 plasma worsened the characteristics of OLED device. On the optimized experimental condition, the turn-on voltage of the N2O plasma treated OLED (8.6 V) was lower than that of the OLED without plasma treated ones (11.1 V). In addition, the luminance of the OLED with its ITO anode surface treated by the N2O plasma was improved to 50 cd/m2, higher than the 42 cd/m2 of the untreated OLED.