0.13μm显影工艺中喷嘴选择和程式改进的研究
Nozzle selection and recipe improvement in 0.13μm development process
随着集成电路工艺关键尺寸的不断递减,制造工艺中关键的光刻技术面临巨大的挑战。这不仅是技术节点跨越的难题,更是需要新工艺平台生产设备的更新和优化,以满足半导体ULSI的性能和可靠性的提高。由此带来新的课题是,如何尽可能在现有工艺平台的生产设备条件下,通过对关键部件的改动和工艺条件的最优化设置,来达到更高的工艺要求。对于目前国内以8英寸wafer(晶圆)为主流的生产线,主要面向0.13μm的技术节点来看,更加具有现实意义。 本文通过对于光刻工艺中的显影工序实验数据分析。研究了显影设备的部件nozzle(喷嘴)的变更和对显影步骤工艺条件的优化。得出了最适应于0.13μm工艺平台的LD显影喷嘴加上两次显影涂布的模式。解决了困扰业界的显影效果和对于表面图形的冲击效应的矛盾问题,从而达到0.35μm光刻工艺平台到0.13μm工艺平台的平滑升级。
With the critical dimension (CD) continuously decreasing in integrated circuit technology, the key technology of photolithography is facing a great challenge. To meet the semiconductor ULSI performance and reliability improvement, equipment needs update and optimization to match new technology platform. It brings a new task is that how to reach the process target without the process equipment update. The main solution is that modification of the hardware and optimization of the process condition. Especially the mainstream manufactory line inland are 8 inch techniques that are facing the 0.13μm technique level, the issue has more realistic meaning. This thesis through the study of experiment data of the development, try to cover the issue of the new process stage requirement by nozzle tip improvement and recipe optimize. In the end, we get the conclusion that the combination of LD nozzle and double scan recipe is the best solution to overcome the question. We also get many process factors that can keep process stable and controllable, for the need of 0.13μm process requirement and use for the product manufacture.
吴敏
微电子学、集成电路半导体技术
集成电路显影0.13μm喷嘴程式
Integrated circuitDevelopment0.13μmNozzleRecipe
吴敏.0.13μm显影工艺中喷嘴选择和程式改进的研究[EB/OL].(2012-07-31)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201207-334.点此复制
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