n型Mg2Si0.6Sn0.4基半导体的热电性能研究
hermoelectric properties of n-type Mg2Si0.6Sn0.4 based semiconductors
采用感应熔炼然后热压的方法制备了n型Mg2Si0.6Sn0.4基半导体热电材料Mg2Si0.6-xBixSn0.4 (x = 0, 0.005, 0.010, 0.015)和Mg2Si0.6-yTeySn0.4 (y = 0, 0.005, 0.010, 0.015)。电学性能测试表明，Bi 和Te的掺入均提高了材料的电导率，降低了材料的Seebeck系数，其中施主杂质Bi的掺杂效果要优于Te；热学性能测试结果显示，Bi掺杂材料的热导率较Te掺杂材料的热导率低。在测试温度范围内，Mg2Si0.595Bi0.005Sn0.4具有最高的ZT值，在760 K时达到0.65。
N-type Mg2Si0.6Sn0.4 based thermoelectric materials Mg2Si0.6-xBixSn0.4 (x = 0, 0.005, 0.010, 0.015) and Mg2Si0.6-yTeySn0.4 (y = 0, 0.005, 0.010, 0.015) were prepared by induction melting and hot-pressing. It was found that the electrical conductivity increases and the Seebeck coefficient decreases by doping of Bi or Te. The doping effect of Bi is better than Te. The thermal conductivities of Bi-doped materials are lower than that of Te-doped one. A highest dimensionless figure of merit ZT ~ 0.65 at 760 K is attained for Mg2Si0.595Bi0.005Sn0.4.
赵新兵、张倩、朱铁军
材料科学物理学能源动力工业经济
热电材料Mg2Si0.6Sn0.4掺杂
thermoelectric materials Mg2Si0.6Sn0.4 doping
赵新兵,张倩,朱铁军.n型Mg2Si0.6Sn0.4基半导体的热电性能研究[EB/OL].(2008-12-26)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/200812-879.点此复制
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