硅衬底上径向a-Si:H(P)/c-Si(N)异质结的制备
Fabrication of radial a-Si:H(P)/c-Si(N) heterojunction on silicon substrate
首先，在n/N+外延硅衬底上利用化学刻蚀法完成大面积均一硅纳米线的刻蚀，再利用热丝化学气相淀积法（HWCVD）沉积p型非晶硅薄膜，从而得到硅纳米线径向a-Si:H(P型)/c-Si(N型)异质结结构。测试结果表明，这种结构具有很强的抗反射性能，在宽的光谱范围内反射率始终低于2.5％。对硅纳米线径向pn结进行IV测试，测试的曲线与理想情况接近，具有很好的整流特性。
Large-area uniform of SiNWs were fabricated by chemical etching method on n/N+ silicon substrate. Then p-type amorphous silicon film was deposited on n-type single-crystalline SiNWs by HWCVD that formed core-shell radial pn junction structures. Test results show that the nanowire structure has very strong antireflection property and the reflectivity is lower than 2.5% in broad spectral range. Radial pn junction silicon nanowires IV test results show that the image is close to the ideal and has a very good diode characteristics.
刘艳红、孙艳平、蒋继文
半导体技术
纳米线径向热丝化学气相淀积
nanowiresradialHWCVD
刘艳红,孙艳平,蒋继文.硅衬底上径向a-Si:H(P)/c-Si(N)异质结的制备[EB/OL].(2012-03-01)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201203-14.点此复制
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