Improvement of Electroactivity of VO2 Nanowires through Langmuir-Blodgett Assembly

We report large improvement of electroactivity of VO2 nanowires through Langmuir-Blodgett assembly. The products were characterized by XRD, SEM, CV, and I-V investigation. XRD studies show that VO2 nanowire LB films exhibits (00l) crystal plane orientation. CV investigation confirms that electrochemical capacity and current density of VO2 nanowires are enhanced by two order of magnitutude through LB assembly. I-V investigation shows the conductivity could be improved by about two orders of magnitude. The improvement of electroactivity of VO2 nanowires may result from orientated and locally ordered nanowire monolayer structure and resulting increase in surface area of LB film.