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Spectroscopic Ellipsometry and Positron Annihilation Investigation of Sputtered HfO2 Films

中文摘要

Our results suggest that SE and PAS are effective techniques to study the optical and defect properties of HfO2 and the results provide insights for the fabrication of high-quality HfO2 thin films for optical application.

Y. R. Su、B. Y Wang、X. B. Qin、J. Li、X. Z. Cao、H. T. Zhao、Z. W. Ma、Y. Z. Xie、L. X. Liu

10.12074/201703.00552V1

物理学材料科学光电子技术

HfO2Spectroscopic ellipsometrypositron annihilation spectroscopyopen volume defects

Y. R. Su,B. Y Wang,X. B. Qin,J. Li,X. Z. Cao,H. T. Zhao,Z. W. Ma,Y. Z. Xie,L. X. Liu.Spectroscopic Ellipsometry and Positron Annihilation Investigation of Sputtered HfO2 Films[EB/OL].(2017-03-26)[2025-08-07].https://chinaxiv.org/abs/201703.00552.点此复制

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