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温度对纳米银膏连接的铜电极扩散阻挡层TiW性能的研究

Research on the temperature influnce on TiW diffusion barrier of copper electrode based on nano-silver paste connection

中文摘要英文摘要

采用紫铜作为热电发电器件的电极材料,在其表面磁控溅射W-Ti(20at.%Ti)作为铜电极的扩散阻挡层,用纳米银膏烧结形成接头并进行不同温度的时效处理。通过场发射扫描电镜对接头形貌进行分析,结果显示:时效温度低于350℃时,阻挡层可以有效阻止铜向银膏层的扩散,但当在350℃时效120h时,距离阻挡层2-3μm的银膏处可以检测到铜原子,将时效温度提高到400℃时效24h便会发生铜的扩散。接头剪切实验结果表明,在400℃时效24h,剪切强度可达到19.67MPa,仍满足力学性能需要,但断口位置由未时效时的银膏层向阻挡层和银膏层的结合处发生了转移。

In this study, the copper electrode was prepared, a TiW(20at.%Ti) target was used. TiW was deposited on copper electrode by DC magnetron sputtering as diffusion barrier, and nano-silver paste was considered as soldering paste. The effects of TiW as diffusion barrier for copper electrode was investigated after thermal aging. As the increasing aging temperature, the diffusion characteristics at interface between nano-silver paste and copper electrode have been analyzed. The cross section of interface was investigated using field-emission SEM. The results show that when the aging temperature was within 350℃, the diffusion barrier can work normally, however for the case of aging 120 h at 350℃, the trace of Cu element was found in the nano-silver paste even about 2-3 μm far away from the diffusion barrier, moreover the same phenomenon occurred when aging 24 h at 400℃. For further investigation, the shear strength of aged copper electrode/TiW diffusion barrier/nano-silver paste/TiW diffusion barrier/copper electrode joints was studied and the results show the joints have sufficient strength which is 19.67 MPa even after aging at 400℃ for 24 h.

荆洪阳、韩永典、陆国权、徐连勇、李华一、刘暾

电工材料金属学、热处理焊接、金属切割、金属粘接

电极材料扩散阻挡层纳米银膏接头时效

copper electrode materialsdiffusion barriernano-silver pastejonitaging

荆洪阳,韩永典,陆国权,徐连勇,李华一,刘暾.温度对纳米银膏连接的铜电极扩散阻挡层TiW性能的研究[EB/OL].(2015-12-07)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201512-343.点此复制

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