E$leq$ 90 keV能区的质子在硅中的能损的研究

he uncertainty of existed experimental energy loss of hydrogen ions in low energy region is rather large. However it is always a challenge to measure the energy loss in low energy region in experiment. In this work, the projected range of ions in thick target was used to investigate the electronic energy loss of H$^+$ ions in single crystal silicon. Firstly, the single crystal silicon targets were implanted by H$^+$ ions with energies of 10, 25, 80, 90 keV in random direction at room temperature. Then, the depth profiles of implanted hydrogen were measured by resonance nuclear reaction $^{1}$H($^{15}$N,γα)$^{12}$C analysis. The projected ranges of as-implanted H$^+$ ions with different energies were obtained from the depth profiles because the implanted hydrogen showed limited mobility in silicon. Finally, the electronic energy loss of H$^+$ in silicon was derived from the projected range data with a code based on Projected Range Algorithm (PRAL). The result was roughly consistent to electronic energy loss of SRIM. This work provided an experimental method to exactly detect the energy loss of hydrogen ions in low energy where the hydrogen implanted showed limited mobility.