薄膜厚度对纯水基溶胶-凝胶法制备Hf0.5Zr0.5O2纳米薄膜相转变的影响
hickness Dependent Phase Evolution of Nano-Hf0.5Zr0.5O2 Thin Films Prepared with Aqueous Precursor
利用纯水基溶胶-凝胶法在Si基底上制备Hf0.5Zr0.5O2薄膜,对Hf0.5Zr0.5O2胶体进行DSC-TGA分析,并以AFM、XRR以及GIXRD为主要手段对薄膜样品的表面形貌、厚度以及结构进行分析,结果表明 DSC曲线中位于496 C 的放热峰是由于晶化所致。AFM图像显示薄膜表面平整光滑且无明显气孔与微裂纹产生。通过拟合XRR测试数据获得了薄膜厚度、密度及表面粗糙度。薄膜的沉积速率为每旋涂周期16.6 nm,薄膜厚度与旋涂周期呈正比,700 C退火前后薄膜密度由5.40 增加到 8.02 g/cm3。利用GIXRD探究了薄膜厚度对结构的影响,结果表明添加ZrO2有利于HfO2薄膜四方相的稳定。薄膜在厚度12.9 nm以下时四方相完全稳定,随着厚度增加,由于表面能效应四方相逐渐向单斜相转变。
Nano-Hf0.5Zr0.5O2 thin films were prepared on Si substrates by sol-gel processes to reveal their surface, structural and chemical properties. The exotherm peak at 496 C related to crystallization was observed in the DSC data of the Hf0.5Zr0.5O2 precursor. AFM images revealed the film surfaces were smooth and flat, no pores and micro-cracks were discernable. By fitting the XRR curves, the film thickness, density and surface roughness data were obtained. The film thickness was proportional to the number of spin coating cycles, with a deposition rate of 16.6 nm per cycle. The density increased significantly from 5.4 to 8.0 g/cm3 after annealing at 700 C. The effect of thickness on the crystal structure of Hf0.5Zr0.5O2 films was examined. Addition of ZrO2 helped to partially stabilize the tetragonal structure of HfO2. While stabilization of the tetragonal phase in Hf0.5Zr0.5O2 films could be maintained only when the thickness was below 12.9 nm. A further increase in the thickness led to the films consisting of a mixture of tetragonal and monoclinic phases, which should be attributed to a reduction of the surface energy contribution.
周大雨、郭春霞
材料科学晶体学
纯水基溶胶-凝胶Hf0.5Zr0.5O2厚度相转变
queous precursorSol-gelHf0.5Zr0.5O2ThicknessPhase evolution
周大雨,郭春霞.薄膜厚度对纯水基溶胶-凝胶法制备Hf0.5Zr0.5O2纳米薄膜相转变的影响[EB/OL].(2015-04-20)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/201504-316.点此复制
评论