势垒层掺杂浓度和栅极金属功函数对高κ栅AlGaN/GaN MOS-HEMT的影响
Influence of barrier layer doping concentration and metal work function on AlGaN/GaN MOS-HEMT with high κ gate
本文分析了HEMT器件的工作机理和器件的基本物理模型，对器件特性进行了二维数值仿真分析，重点研究了器件势垒层掺杂浓度、栅极金属功函数对器件特性的影响。研究结果表明：增加势垒层掺杂浓度、减小栅金属功函数可以增加沟道的载流子浓度。结合能带理论，深入分析了产生该现象的原因。
In the paper, the basic work mechanism and fundamental physical model of HEMT are investigated. 2D simulation and analysis are performed by special software. The device characteristics change with the barrier layer doping concentration and gate metal work function. The increase of barrier layer doping concentration and decrease of the gate metal work function can cause the channel carrier concentration to increase. Based on the energy band theory, the phenomenon is analyzed at the end of the paper.
刘红侠、陈树鹏
半导体技术
lGaN/GaNHEMT势垒层掺杂浓度栅极金属功函数
AlGaN/GaNHEMTbarrier layer doping concentrationmetal work function
刘红侠,陈树鹏.势垒层掺杂浓度和栅极金属功函数对高κ栅AlGaN/GaN MOS-HEMT的影响[EB/OL].(2014-01-16)[2025-08-23].http://www.paper.edu.cn/releasepaper/content/201401-743.点此复制
评论