衬底温度对MOCVD法制备的Sb掺杂ZnO薄膜的光学和电学特性的影响

Sb-doped ZnO thin films were fabricated on c-Al2O3 sapphire substrates by the metallorganic chemical vapor deposition (MOCVD) technique at different substrate temperatures. The crystalline quality was measured by X-ray diffraction. The optical and electrical properties of the films were characterized by the Hall effect measurement and photoluminescence (PL) spectrum measurement equipment. The results of XRD indicate that the crystalline quality of the film has been improved when the substrate temperature increased from 500℃ to 550℃. As the temperature of the substrate increased further, the crystalline quality of the film deteriorated. The results of Hall effect and PL measurement indicate that the Sb-doped ZnO thin films deposited at 550℃ have the best optical and electrical property.