利用空间电荷限制电流方法计算MoO3:CBP的空穴迁移率
Investigation of hole mobility of MoO3-doped 4,4′-Bis(carbazol-9-yl) -biphenyl by using space-charge-limited currents
利用空间电荷限制电流方法计算MoO3:CBP的空穴迁移率，掺杂浓度范围是6%-20%， 当MoO3与CBP共蒸时，与未掺杂的CBP薄膜相比可以观察到电导率显著的增加。 高水平的掺杂可以在界面处形成准欧姆接触。在电场为0.3 MV/cm下,掺杂浓度为16%时，空穴迁移率达到6.0×10 - 5 cm2/Vos 有机层的厚度为60nm。即使在一个较低的电场0.1 MV/cm,空穴迁移率为4.2×10-5 cm2/Vos,近三倍高于典型的空穴传输材料NPB的迁移率1.63×10 - 5 cm2/Vos，降低迁移率的原因主要是由于的界面陷阱。
he hole mobility of p-type doped 4,4′-Bis(carbazol-9-yl)-biphenyl(CBP) with MoO3 at the various doping concentration (8%-20%) has been estimated by using space-charge-limited current measurements. When MoO3 is co-evaporated with CBP, a significant increase in conductivity is observed, compared to intrinsic CBP thin films. A high level of doping has been used for a quasi-Ohmic contact. For an electric field of 0.3 MV/cm, the estimated hole mobility of the device with a doping concentration of 16% reaches 6.0×10-5 cm2/V s at 60nm thickness. Even in a lower electric field of 0.1 MV/cm, the hole mobility ,4.2 × 10-5cm2/V s, is nearly three times higher than the value of 1.63× 10-5 cm2/V s obtained for the typical hole transport material NPB. The authors suggest that the lower mobility is caused by the interfacial trap states.
杨倩、王振国、许并社、王华、孙钦君、郝玉英
物理学半导体技术
有机电致发光器件掺杂电导率迁移率
Organic light-emitting diodeDopingConductivityMobility
杨倩,王振国,许并社,王华,孙钦君,郝玉英.利用空间电荷限制电流方法计算MoO3:CBP的空穴迁移率[EB/OL].(2012-04-20)[2025-08-10].http://www.paper.edu.cn/releasepaper/content/201204-295.点此复制
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