功率DMOS的UIS失效机理及改善
he Mechanism and Improvment of the UIS Faliure for Power DMOS
功率DMOS器件是目前应用最为广泛的新型功率器件。UIS过程是功率DMOS在系统应用中所能遭遇的最极端电热应力情况，因此抗UIS失效能力是衡量其可靠性的重要指标。本文对功率DMOS的雪崩耐量的测试原理、UIS失效机制、模拟方法和加固措施进行了全面的概述。
Power DMOS is currently the most widely used new power device. Unclamped inductive switching (UIS) is the most extreme electro-thermal stress that can be suffered in the power DMOS applications. Therefore the ability of anti UIS failure is an important indicator to measure the reliability of power DMOS. This paper gives a comprehensive overview on the principle of testing the avalanche energy, UIS failure mechanisms, simulation and reinforcement measures for improving UIS capability.
高巍、任敏、邓光敏、郭绪阳、李泽宏、张波、张金平
半导体技术微电子学、集成电路电子元件、电子组件
微电子与固体电子学功率DMOS非箝位电感负载可靠性雪崩耐量
Microelectronics and Solid State ElectronicsPower DMOSUnclamped inductive switchingReliabilityAvalanche energy
高巍,任敏,邓光敏,郭绪阳,李泽宏,张波,张金平.功率DMOS的UIS失效机理及改善[EB/OL].(2014-05-04)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201405-34.点此复制
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