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X射线光电子谱研究ZnMgO/ZnO薄膜异质结能阶

Study of ZnMgO/ZnO Heterostructure Band Offset by X-ray Photoelectron Spectroscopy

中文摘要英文摘要

利用脉冲激光沉积法在蓝宝石衬底上制备了不同ZnMgO薄膜层厚度的Zn0.8Mg0.2O/ZnO异质结和单一ZnO薄膜结构。X射线衍射结果表明ZnMgO/ZnO异质结和单一ZnO薄膜都具有六方纤锌矿晶体结构。利用X射线光电子能谱研究了ZnMgO/ZnO异质结价带能阶。研究结果获得ZnMgO/ZnO异质结价带能阶△Ev=0.06±0.01 eV,导带能阶 △Ec=0.34±0.01 eV。

In this paper, Zn0.8Mg0.2O/ZnO thin film heterostructures with different ZnMgO layer thicknesses were deposited on sapphire substrate by using pulsed laser deposition. Single layer of ZnO thin film was also deposited on sapphire substrate. X-ray diffraction results show hexagonal wurtzite crystalline structrue for both ZnMgO/ZnO heterostructure and ZnO single layer films. X-ray photoelectron spectroscopy was used to determine the valence band offset of ZnMgO/ZnO heterostructure. A value of △Ev=0.06±0.01 eV was obtained by X-ray photoelectron spectroscopy measurements. Conduction band offset for ZnMgO/ZnO is determined to be 0.34±0.01 eV.

刘子龙、李远洁

物理学晶体学光电子技术

氧化镁锌异质结X射线光电子能谱能阶

ZnMgOheterostructureX-ray photoelectron spectroscopyband offset

刘子龙,李远洁.X射线光电子谱研究ZnMgO/ZnO薄膜异质结能阶[EB/OL].(2011-03-11)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201103-486.点此复制

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